JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR (PNP) FEATURES z High DC current gain. h FE :200 TYP .(V CE =-1V,I C= -100mA) z Complimentary to 2SD596. MAXIMUM RATINGS (T a=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltag